Gan-based semiconductor junction structure

ABSTRACT

The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P ++ —Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N ++ —Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

TECHNICAL FIELD

The present invention relates to a new group-III nitride tunneling junction structure.

BACKGROUND ART

Generally, a tunneling phenomenon in highly doped P-N junction diodes has attracted many interests. Particularly, a tunneling phenomenon in GaAs-based devices which can be easily doped with a high concentration of P or N is frequently used in the fabrication of devices which have low resistance and low power consumption by using electric currents caused by electrons as a substitute for currents caused by holes with low mobility, because of good resistance in a reverse bias state [J. J. Wierer, etc, “Buried tunnel contact junction AlGaAs—GaAs—InGaAs quantum well heterostructure lasers with oxide-defined lateral current”, Appl. Phys. Lett. 71 (16), pp. 2286-2288, October, 1997].

Also, InGaAs with low band gap can be interposed between p-n junctions, so that a tunneling potential barrier can be lowered, thus increasing tunneling probability [T. A. Richard, etc, “High current density carbon-doped strained-layer GaAs(P+)—InGaAs(n+)—GaAs(n+) p-n tunnel diodes.”, Appl. Phys. Lett, 63 (26), pp. 3616-3618, December, 1993].

In GaN-based nitride semiconductor devices (LED, LD, HBT, FET, HEMT, etc), the formation of low-resistance p-ohmic contacts necessary for improving the performance of the devices encounters many difficulties because of the low conductivity and large band gap of magnesium-doped p-GaN. In an attempt to overcome this problem, studies have been performed in order to reduce power consumption by inserting a reversely biased GaN p-n tunneling junction into a GaN-based LED [U.S. Pat. No. 6,526,082, “P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction”]. Also, there was an attempt to reduce a loss caused by a semi-transparent conductive film in LED, by using highly n-dopable GaN itself as the conductive film [Seong-Ran Jeon, etc. “Lateral current spreading in GaN-based LED utilizing tunnel contact junctions”, Appl. Phys. Lett. (78), 21, 3265-3267, May, 2001].

In order to realize an effective tunnel junction, high concentration doping must be possible first of all. In GaN, there were many efforts to increase the doping level of P-GaN (e.g., P++ InGaN, superlattice structure, and 3D grown GaN), but devices having the tunnel junction in GaN undergo a given tunneling barrier, thus causing an increase in operation voltage [Chih-Hsin Ko, etc, “P-dwon InGaN/GaN Multiple Quantum Wells Light emitting diode structure grown by metal-organic vapor phase epitaxy”, Jpn. J. Appl. Phys. 41 (2002) pp. 2489-2492]. However, since GaAs- or InP-based group III-V compound semiconductors can be easily doped with a high concentration of P, highly p-doped GaAs or graded p-type AlGaAs may be grown on a low concentration of P—GaN so as to lower the potential barrier, thus reducing resistance [U.S. Pat. No. 6,410,944, Song Jong In “Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductor”].

DISCLOSURE

[Technical Problem]

Generally, in GaN-based optoelectronic devices, it is difficult to make an electrode with low contact resistance due to the large band gap and low conductivity of P—GaN. On the other hand, in the case of N—GaN, high concentration doping is possible and an electrode with good resistance characteristics can be easily formed thereon by plasma treatment, etc., without an annealing process. Thus, high power efficiency, high operation speed and high reliability can be ensured by electric currents caused by electrons with a higher mobility than that of holes, which flow by means of an electrode formed using the tunneling phenomenon of a P—N junction, other than hole currents flowing by means of an electrode formed directly on P—GaN. A generally known GaN-based tunnel junction structure is shown in FIG. 1. In this case, in order to increase tunneling currents, a high concentration of an electron layer (n>10 ¹⁹/cm³) 12 and a high concentration of a hole layer (p>10¹⁹/cm³) 13 are required between the n-Al(x)Ga(y)In(z)N layer 14 and the p-Al(x)Ga(y)In(z)N layer 11. As the size of an electric field formed in a depletion layer produced at the junction between the two semiconductor layers increases, the tunneling currents increase. In addition, if a strained InGaN layer is added to the junction, a piezo-electric field will be formed at the junction and will have a positive function to increase the tunneling current [U.S. Pat. No. 6,526,082, “P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction”].

In order to realize an effective tunnel junction, high concentration doping must be possible first of all. In GaN, there were many efforts to increase the doping level of P—GaN (e.g., P++ InGaN, superlattice structure, and 3D grown GaN), but devices having the tunnel junction in GaN undergo a given tunneling barrier, thus causing an increase in operation voltage [Chih-Hsin Ko, etc, “P-dwon InGaN/GaN Multiple Quantum Wells Light emitting diode structure grown by metal-organic vapor phase epitaxy”; Jpn. J. Appl. Phys. 41 (2002) pp. 2489-2492].

[Technical Solution]

An object of the present invention is to provide a group-III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

[Advantageous Effects]

According to the present invention, a tunneling junction structure with a low tunneling potential barrier can be realized using GaN and Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which can be doped with a high concentration of P. Furthermore, p-GaN contact resistance can be reduced. As a result, the high power efficiency, high reliability and ultrahigh speed operation of GaN-based nitride optoelectronic devices can be achieved.

DESCRIPTION OF DRAWINGS

FIG. 1 shows a tunneling junction structure according to a prior art.

FIG. 2 shows a tunneling junction structure according to the present invention, in which a highly P-doped InGaAlAsP layer is inserted.

FIG. 3 is an energy band diagram.

FIG. 4 shows the current-voltage curve of each of a GaN-based P—N junction structure and a tunneling junction structure.

MODE FOR INVENTION

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 shows a group-III nitride tunneling junction structure according to the present invention. As shown in FIG. 2, the group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer 24 which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on the P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 23 and the N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 25, thus realizing a tunneling junction structure with a low tunneling potential barrier. The In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer 24 means a compound semiconductor, such as GaAs, InGaAs, AlGaAs, InP, InGaAsP, InAlAs, InGaP, GaP, or InGaNAs, and a Si layer may also be used as the insertion layer 24. Although FIG. 2 shows the buffer layer 21 formed on the substrate 20, and the tunneling junction 27 between the P—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 22 formed on the buffer layer 21 and the N—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 26, the present invention is not limited thereto. For example, between the buffer layer 21 and the P—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 22, a light-emitting portion including an active layer containing Ga and N may be additionally included.

The general energy band diagram of the tunneling junction structure shown in FIG. 2 is shown in FIG. 3. As shown in FIG. 3, the insertion of the highly P-doped In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) or Si layer 24 provides a lowering in tunneling potential barrier height. Also, a barrier 34 is created by the discontinuity between the P—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) or Si layer 24 and the P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 23. This barrier 34 varies depending on the compositions of the P—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer 24 and the P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 23. For example, in the case of GaAs/GaN, the size of the barrier 34 is about 1.9 eV. In order to reduce this effect of the barrier 34, graded p-type AlGaAs may also be introduced [U.S. Pat No. 6,410,944, Song Jong In “Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductor”]. By the electron tunneling phenomenon between the highly doped P—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) or Si layer 24 and the N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 25, electric currents flow. These electric currents caused by electrons create electric currents caused by holes, thus allowing holes to be supplied to the P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 23. Since the N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) or superlattice structure layer 25 made of N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) can be doped at a high concentration of more than 10²⁰/cm³), the tunneling barrier between the P—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦e≦1, 0≦f≦1) or Si layer 24 and the N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 25 can be very lowered. In FIG. 3, the dotted line 35 denotes the Fermi-level in an equilibrium state.

FIG. 4 shows the current-voltage curve of a GaN-based P—N junction. As shown in FIG. 4, if reverse voltage is applied, the P—N junction will undergo a high potential barrier so that currents will not substantially flow. However, when the tunneling junction structure is inserted into the P—N junction, electric currents can flow well with only a low potential barrier, even if reverse voltage is applied.

Preferably, the P⁺⁺—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24 has a concentration of 10¹⁸-b 10 ²³/cm³.

Preferably, the P⁺⁺—In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24 has a thickness of 1-100 nm. 

1. A GaN-based semiconductor junction structure comprising: a P—Al(x)Ga(y)In(z)N (0x≦1, 0≦y≦1, 0≦z≦1) layer 22, a P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer or superlattice structure layer made of P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) 23, P⁺⁺-III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24, a N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer or superlattice structure layer made of N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) 25, a N—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer
 26. 2. A GaN-based semiconductor junction structure comprising: a buffer 21 on a substrate 20, a lower P—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer 22, a P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer or superlattice structure layer made of P⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) 23, P⁺⁺- III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24, a N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer or superlattice structure layer made of N⁺⁺—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) 25, a N—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer
 26. 3. The GaN-based semiconductor junction structure of claim 2, wherein the P⁺⁺-III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24 has a concentration of 10¹⁸-10²³/cm³.
 4. The GaN-based semiconductor junction structure of claim 2, wherein the P⁺⁺-III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer 24 is selected from a group consisting of GaAs, InGaAs, AlGaAs, InP, InGaAsP, InAlAs, InGaP, GaP, and InGaNAs.
 5. The GaN-based semiconductor junction structure of claim 2, wherein the P⁺⁺-III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) layer or P⁺⁺—Si layer 24 has a thickness of 1-100 nm. 